item no :
LiGaO2moq :
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The main performance parameters |
|
Product Name: |
LiGaO2 single crystal substrate |
Growth method |
Czochralski method |
Crystal Structure : |
Orthogonal system |
Lattice constant: |
a=5.406 Å b=5.012 Å c=6.379 Å |
Melting point: |
1600 ℃ |
Density: |
4.18g/cm3 |
Mohs hardness |
7.5 |
Orientation |
<100>, <001> |
Standard Size |
10x10x0.5mm, 5x5x0.5mm |
Polishing |
Single side polished or Double side polished |
Packing |
class-100 clean bag, in class-1000 clean room |
Application |
LiGaO2 substrate and GaN film are well matched, and can obtain a good gallium nitride film |
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Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com
Wechat:18832681205 Whatsapp :+86 18832681205 Email: Daisy@foam-material.com