Standard Specifications

Product Name

Thermal oxide Silicon wafer (SiO2/Si)
Oxide layer on Silicon wafer
Thermal oxidation of Silicon wafer

Oxide-layer(SiO2 layer)

25nm, 50nm, 100nm,  300nm, 500nm, 1um or others

Oxidation surface

Oxidation process

Dry oxidation, Wet oxidation,

Conductivity type/Dopant

N-type/Phos-doped or N-type/As-doped or P-type/Boron-doped or Un-doped

Orientation

<100> or <111>

Diameter of Silicon wafer

2"(50.8mm), 3"(76.2mm), 4"(100mm), 6"(150mm), 8"(200mm), 12"(250mm)

Thickness of Silicon wafer

280um, 380um, 525um, 675um, 725um

Resistivity (Ohm-cm)

Polishing

Single side polished or Double side polished

Surface Roughness

Ra<5A (0.5nm) or Ra<10A (1.0nm)