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GaSbmoq :
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GaSb as a substrate material can be used for the production of certain infrared lasers and detectors of optical fiber transmission, GaSb is also foreseen with a lattice restriction mobility greater than GaAs, so that it has a potential application in the production of microwave devices. The main growth method GaS single crystal material, including traditional LEC Technology, improved LEC technology, Moving heating method / vertical gradient freeze technology (VGF) / vertical Bridgman technique (VBG) and other.
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Standard Specifications |
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/
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Dopant
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Conductivity type
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Carrier concentration
(cm-3)
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Mobility
(cm2/V.s) |
Dislocation density
(cm-2) |
Standard size
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GaSb
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Undoped
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P-type
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(1~2) x 1017
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600-700
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《3000
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Φ2"x0.5mm
Φ3"x0.6mm
Φ4"x0.8mm |
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GaSb
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Zn-doped
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P-type
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(5~100) x 1017
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200-500
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《3000
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Φ2"x0.5mm
Φ3"x0.6mm
Φ4"x0.8mm |
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GaSb
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Te-doped
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N-type
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(1~20) x 1017
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2000－3500
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《3000
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Φ2"x0.5mm
Φ3"x0.6mm
Φ4"x0.8mm |
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| Orientation |
<100> / <111> ±0.5°
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Standard dimension
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20x20x0.5mm, 10x10x0.5mm, 10x5x0.5mm
Φ2"x0.5mm, Φ3"x0.6mm, Φ4"x0.8mm Or others upon customer's requirements |
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Primary Orientation flat
Second Orientation flat |
16mm(Φ2"), 22mm(Φ3"), 32.5mm(Φ4") 8mm(Φ2"), 11mm(Φ3"), 16mm(Φ4") |
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Surface roughness
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Ra<=5A (0.5nm)
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| Polishing |
Single side Polished or Double side polished
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| TTV / Bow /Warp |
TTV <10um Bow <10um Warp <15um |
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| Special specification | We can customize specific specification upon requirements | ||||||
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